First Flash memory stores it is information in giant blocks vs the small blocks of storage in standard EEPROM which is what keeps flash performance in the lead. Flash memory is also non-volatile meaning it doesn't need power to store it is information. Flash memory stores it is information in an array of cells made from transistors(floating-gate transistors). Until recently each cell held small tiny small little bit of information. Newer Flash cards use a expertise called multilevel cell which allows multilevel storage depending on the level of electrical charge to apply.
A Flash card stores memory by storing electrical charges. & then releasing them appropriately in the coursework of information read /execution. It releases the voltage in spurts allowing a machine or PC to read it like Morse code. Actually binary code, you know all of the "11100011100101010111" on / off code. Although NAND & NOR flash are different systems. The output usually remains the same. The output is based on electrical charges & interpreted as binary code.
Programming a memory card is fundamentally the same thing. The amount of voltage applied sets each cell to a value of either "1" or "0". Yup, that is it your information is stored on the memory card as either on or off. & deleting is the opposite. A immense voltage of the opposite polarity is applied to the unit resetting each cell to it is default state "1". Erasing operations can only be applied per block. Meaning you can only delete the whole block of stored information you cannot delete part of it. Programming the cells however can be completed on an as needed basis byte or word at a time.
FYI:
There is a distinction between NOR & NAND flash memory. Although these are linked by design choices ruled NAND, I would love to point out:
- the connections of the individual memory cells are different
- the interface provided for reading & writing the memory is different (NOR allows random-access for reading, NAND allows only page access)
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